SMCJ16ATR
vs
1.5SMCJ16AHE3TRTB
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
|
| Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
|
| Package Description |
R-PDSO-C2
|
|
| Reach Compliance Code |
compliant
|
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Date Of Intro |
2018-08-30
|
|
| Additional Feature |
EXCELLENT CLAMPING CAPABILITY
|
|
| Breakdown Voltage-Max |
19.7 V
|
|
| Breakdown Voltage-Min |
17.8 V
|
|
| Breakdown Voltage-Nom |
18.75 V
|
|
| Clamping Voltage-Max |
26 V
|
|
| Configuration |
SINGLE
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
|
| JEDEC-95 Code |
DO-214AB
|
|
| JESD-30 Code |
R-PDSO-C2
|
|
| Non-rep Peak Rev Power Dis-Max |
1500 W
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity |
UNIDIRECTIONAL
|
|
| Rep Pk Reverse Voltage-Max |
16 V
|
|
| Reverse Current-Max |
5 µA
|
|
| Reverse Test Voltage |
16 V
|
|
| Surface Mount |
YES
|
|
| Technology |
AVALANCHE
|
|
| Terminal Form |
C BEND
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
4
|
|
|
|
|
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