SMCJ14A
vs
MSMCJLCE14AE3/TR
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
GENERAL INSTRUMENT CORP
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
unknown
compliant
Breakdown Voltage-Max
17.9 V
17.2 V
Breakdown Voltage-Min
15.6 V
15.6 V
Clamping Voltage-Max
23.2 V
23.2 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-J2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
14 V
14 V
Reverse Current-Max
5 µA
5 µA
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
J BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
57
1
Rohs Code
Package Description
SMCJ, 2 PIN
ECCN Code
EAR99
HTS Code
8541.10.00.40
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Nom
16.4 V
Diode Capacitance-Min
100 pF
JEDEC-95 Code
DO-214AB
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation-Max
5 W
Reference Standard
IEC-61000-4-2, 4-4, 4-5
Reverse Test Voltage
14 V
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare SMCJ14A with alternatives
Compare MSMCJLCE14AE3/TR with alternatives