SMCJ130HE3/57T vs MSMCJLCE130AE3TR feature comparison

SMCJ130HE3/57T Vishay Intertechnologies

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MSMCJLCE130AE3TR Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC MICROSEMI CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY HIGH RELIABILITY
Breakdown Voltage-Max 176 V 159 V
Breakdown Voltage-Min 144 V 144 V
Breakdown Voltage-Nom 160 V 151.5 V
Clamping Voltage-Max 231 V 209 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W 5 W
Reference Standard AEC-Q101; UL RECOGNIZED IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max 130 V 130 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 1
Part Package Code DO-214AB
Package Description R-PDSO-C2
Pin Count 2
Diode Capacitance-Min 90 pF
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Reverse Current-Max 5 µA
Reverse Test Voltage 130 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare SMCJ130HE3/57T with alternatives

Compare MSMCJLCE130AE3TR with alternatives