SMCJ130AHE3/57T vs MVSMCJLCE130ATR feature comparison

SMCJ130AHE3/57T Vishay Semiconductors

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MVSMCJLCE130ATR Microsemi Corporation

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY SEMICONDUCTORS MICROSEMI CORP
Part Package Code DO-214AB DO-214AB
Package Description R-PDSO-C2 R-PDSO-C2
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY TR, 7 INCH: 750
Breakdown Voltage-Max 159 V 159 V
Breakdown Voltage-Min 144 V 144 V
Breakdown Voltage-Nom 151.5 V 151.5 V
Clamping Voltage-Max 209 V 209 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard AEC-Q101; UL RECOGNIZED MIL-19500
Rep Pk Reverse Voltage-Max 130 V 130 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 1

Compare SMCJ130AHE3/57T with alternatives

Compare MVSMCJLCE130ATR with alternatives