SMCJ12CHE3/57T
vs
1SMC8.5CATR13
feature comparison
All Stats
Differences Only
Rohs Code
Yes
No
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
VISHAY SEMICONDUCTORS
CENTRAL SEMICONDUCTOR CORP
Part Package Code
DO-214AB
Package Description
R-PDSO-C2
R-PDSO-C2
Pin Count
2
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
16.3 V
10.82 V
Breakdown Voltage-Min
13.3 V
9.44 V
Breakdown Voltage-Nom
14.8 V
10.13 V
Clamping Voltage-Max
22 V
14.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
6.5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max
12 V
8.5 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
6
Pbfree Code
No
JESD-609 Code
e0
Terminal Finish
TIN LEAD
Compare SMCJ12CHE3/57T with alternatives
Compare 1SMC8.5CATR13 with alternatives