SMCJ12C vs SMCJ12CR6G feature comparison

SMCJ12C Secos Corporation

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SMCJ12CR6G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer SECOS CORP TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 15.73 V 16.3 V
Breakdown Voltage-Min 12.87 V 13.3 V
Breakdown Voltage-Nom 14.3 V 14.8 V
Clamping Voltage-Max 19.9 V 22 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 6.5 W 5 W
Rep Pk Reverse Voltage-Max 12 V 12 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 43 1
JEDEC-95 Code DO-214AB
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

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