SMCJ120ATR
vs
MASMCJLCE120A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Date Of Intro
2018-08-30
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
147 V
147 V
Breakdown Voltage-Min
133 V
133 V
Breakdown Voltage-Nom
140 V
Clamping Voltage-Max
193 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
120 V
120 V
Reverse Current-Max
5 µA
Reverse Test Voltage
120 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
2
2
Package Description
PLASTIC PACKAGE-2
Factory Lead Time
40 Weeks
JESD-609 Code
e0
Power Dissipation-Max
5 W
Qualification Status
Not Qualified
Reference Standard
MIL-19500
Terminal Finish
TIN LEAD
Compare SMCJ120ATR with alternatives
Compare MASMCJLCE120A with alternatives