SMCJ120 vs MASMCJLCE120AE3/TR feature comparison

SMCJ120 International Semiconductor Inc

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MASMCJLCE120AE3/TR Microsemi Corporation

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 163 V 147 V
Breakdown Voltage-Min 133 V 133 V
Breakdown Voltage-Nom 148 V 140 V
Clamping Voltage-Max 214 V 193 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -40 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 120 V 120 V
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 44 1
Rohs Code Yes
Additional Feature TR, 7 INCH: 750
JEDEC-95 Code DO-214AB
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare SMCJ120 with alternatives

Compare MASMCJLCE120AE3/TR with alternatives