SMCJ11AHE3/57T
vs
MSMCJLCE11AE3TR
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
VISHAY SEMICONDUCTORS
MICROSEMI CORP
Part Package Code
DO-214AB
DO-214AB
Package Description
R-PDSO-C2
R-PDSO-C2
Pin Count
2
2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
HIGH RELIABILITY
Breakdown Voltage-Max
13.5 V
13.5 V
Breakdown Voltage-Min
12.2 V
12.2 V
Breakdown Voltage-Nom
12.85 V
12.85 V
Clamping Voltage-Max
18.2 V
18.2 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
3.5 V
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
6.5 W
5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
AEC-Q101; UL RECOGNIZED
IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max
11 V
11 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Base Number Matches
1
1
Diode Capacitance-Min
100 pF
Reverse Current-Max
5 µA
Reverse Test Voltage
11 V
Compare SMCJ11AHE3/57T with alternatives
Compare MSMCJLCE11AE3TR with alternatives