SMCJ110A-T3
vs
MQSMCJLCE110AE3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
MICROSEMI CORP
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Max
140.5 V
135 V
Breakdown Voltage-Min
122 V
122 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
110 V
110 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
2
1
Part Package Code
DO-214AB
Pin Count
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Nom
128.5 V
Clamping Voltage-Max
177 V
JESD-609 Code
e3
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Power Dissipation-Max
5 W
Reference Standard
MIL-19500
Terminal Finish
MATTE TIN
Compare SMCJ110A-T3 with alternatives
Compare MQSMCJLCE110AE3 with alternatives