SMCJ10CA.TF vs SMCJ10C feature comparison

SMCJ10CA.TF Semtech Corporation

Buy Now Datasheet

SMCJ10C Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SEMTECH CORP SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Min 11.1 V 11.1 V
Clamping Voltage-Max 17 V 18.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 44
Rohs Code Yes
Package Description R-PDSO-C2
Breakdown Voltage-Max 13.57 V
Breakdown Voltage-Nom 12.335 V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Rep Pk Reverse Voltage-Max 10 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare SMCJ10CA.TF with alternatives