SMCJ10 vs SMCJ10A-ATR feature comparison

SMCJ10 MDE Semiconductor Inc

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SMCJ10A-ATR Sangdest Microelectronics (Nanjing) Co Ltd

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MDE SEMICONDUCTOR INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Part Package Code DO-214AB
Package Description R-PDSO-C2 R-PDSO-C2
Pin Count 2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 12.3 V 12.3 V
Breakdown Voltage-Min 11.1 V 11.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED AEC-Q101
Rep Pk Reverse Voltage-Max 10 V 10 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 20 1
Date Of Intro 2018-08-30
Breakdown Voltage-Nom 11.7 V
Clamping Voltage-Max 17 V
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reverse Current-Max 5 µA
Reverse Test Voltage 10 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare SMCJ10 with alternatives

Compare SMCJ10A-ATR with alternatives