SMCG8.5AHE3/9AT vs 1.5KE22A_R2_10001 feature comparison

SMCG8.5AHE3/9AT Vishay Semiconductors

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1.5KE22A_R2_10001 PanJit Semiconductor

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer VISHAY SEMICONDUCTORS PAN JIT INTERNATIONAL INC
Part Package Code DO-215AB DO-201AE
Package Description R-PDSO-G2 O-PALF-W2
Pin Count 2 2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED, HIGH RELIABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 10.4 V 23.1 V
Breakdown Voltage-Min 9.44 V 20.9 V
Breakdown Voltage-Nom 9.92 V 22 V
Clamping Voltage-Max 14.4 V 30.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AB DO-201AE
JESD-30 Code R-PDSO-G2 O-PALF-W2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 8.5 V 18.8 V
Surface Mount YES NO
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING WIRE
Terminal Position DUAL AXIAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 2 1
Case Connection ISOLATED

Compare SMCG8.5AHE3/9AT with alternatives

Compare 1.5KE22A_R2_10001 with alternatives