SMCG64AHE3/9AT
vs
MSMCJLCE60A
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
Rohs Code
Yes
No
Part Life Cycle Code
Active
Active
Ihs Manufacturer
VISHAY SEMICONDUCTORS
MICROCHIP TECHNOLOGY INC
Part Package Code
DO-215AB
Package Description
R-PDSO-G2
SMCJ, 2 PIN
Pin Count
2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED, HIGH RELIABILITY
HIGH RELIABILITY
Breakdown Voltage-Max
78.6 V
73.7 V
Breakdown Voltage-Min
71.1 V
66.7 V
Breakdown Voltage-Nom
74.85 V
70.2 V
Clamping Voltage-Max
103 V
96.8 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-215AB
DO-214AB
JESD-30 Code
R-PDSO-G2
R-PDSO-C2
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
6.5 W
5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
UL RECOGNIZED
IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max
64 V
60 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Matte Tin (Sn)
TIN LEAD
Terminal Form
GULL WING
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Base Number Matches
2
2
Factory Lead Time
40 Weeks
Diode Capacitance-Min
90 pF
Reverse Current-Max
5 µA
Reverse Test Voltage
60 V
Compare SMCG64AHE3/9AT with alternatives
Compare MSMCJLCE60A with alternatives