SMCG5661AE3/TR13 vs SMCG130AHE3/9AT feature comparison

SMCG5661AE3/TR13 Microsemi Corporation

Buy Now Datasheet

SMCG130AHE3/9AT Vishay Semiconductors

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer MICROSEMI CORP VISHAY SEMICONDUCTORS
Part Package Code DO-215AB DO-215AB
Package Description PLASTIC PACKAGE-2 R-PDSO-G2
Pin Count 2 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED, HIGH RELIABILITY
Breakdown Voltage-Max 158 V 159 V
Breakdown Voltage-Min 143 V 144 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AB DO-215AB
JESD-30 Code R-PDSO-G2 R-PDSO-G2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 6.5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 128 V 130 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1
Pbfree Code Yes
Breakdown Voltage-Nom 151.5 V
Clamping Voltage-Max 209 V
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Reference Standard UL RECOGNIZED
Time@Peak Reflow Temperature-Max (s) 30

Compare SMCG5661AE3/TR13 with alternatives

Compare SMCG130AHE3/9AT with alternatives