SMCG5656E3
vs
SMCJ78AM6
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MICROSEMI CORP
TAIWAN SEMICONDUCTOR CO LTD
Part Package Code
DO-215AB
Package Description
R-PDSO-G2
R-PDSO-C2
Pin Count
2
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Max
100 V
95.8 V
Breakdown Voltage-Min
81.9 V
86.7 V
Breakdown Voltage-Nom
91 V
91.25 V
Clamping Voltage-Max
131 V
126 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-215AB
DO-214AB
JESD-30 Code
R-PDSO-G2
R-PDSO-C2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
5 W
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
73.7 V
78 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
GULL WING
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Peak Reflow Temperature (Cel)
260
Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
30
Compare SMCG5656E3 with alternatives
Compare SMCJ78AM6 with alternatives