SMCG26AHE3/9AT vs SMCJ26A-H feature comparison

SMCG26AHE3/9AT Vishay Semiconductors

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SMCJ26A-H Bourns Inc

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer VISHAY SEMICONDUCTORS BOURNS INC
Part Package Code DO-215AB
Package Description R-PDSO-G2 R-PDSO-C2
Pin Count 2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED, HIGH RELIABILITY PRSM-MIN
Breakdown Voltage-Max 31.9 V 31.9 V
Breakdown Voltage-Min 28.9 V 28.9 V
Breakdown Voltage-Nom 30.4 V 30.4 V
Clamping Voltage-Max 42.1 V 42.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AB DO-214AB
JESD-30 Code R-PDSO-G2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W 5 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max 26 V 26 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn) MATTE TIN
Terminal Form GULL WING C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 2 2

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