SMCG120AHE3/9AT vs SMCG5661/TR13 feature comparison

SMCG120AHE3/9AT Vishay Semiconductors

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SMCG5661/TR13 Microsemi Corporation

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Pbfree Code Yes No
Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer VISHAY SEMICONDUCTORS MICROSEMI CORP
Part Package Code DO-215AB DO-215AB
Package Description R-PDSO-G2 PLASTIC PACKAGE-2
Pin Count 2 2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED, HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Max 147 V 165 V
Breakdown Voltage-Min 133 V 135 V
Breakdown Voltage-Nom 140 V
Clamping Voltage-Max 193 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AB DO-215AB
JESD-30 Code R-PDSO-G2 R-PDSO-G2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 120 V 121 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn) TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 2 1

Compare SMCG120AHE3/9AT with alternatives

Compare SMCG5661/TR13 with alternatives