SMCG110A-M3/9AT
vs
1.5SMC130HV6G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
not_compliant
compliant
Factory Lead Time
8 Weeks
Breakdown Voltage-Max
135 V
143 V
Breakdown Voltage-Min
122 V
117 V
Breakdown Voltage-Nom
128.5 V
130 V
Clamping Voltage-Max
177 V
187 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-215AB
DO-214AB
JESD-30 Code
R-PDSO-G2
R-PDSO-C2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
6.5 W
6.5 W
Reference Standard
UL RECOGNIZED
AEC-Q101; IEC-61249-2-21
Rep Pk Reverse Voltage-Max
110 V
105 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
GULL WING
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
30
Base Number Matches
1
1
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Forward Voltage-Max (VF)
5 V
Reverse Current-Max
1 µA
Reverse Test Voltage
105 V
Compare SMCG110A-M3/9AT with alternatives
Compare 1.5SMC130HV6G with alternatives