SMBJP6KE82CAE3TR
vs
P6SMB82CA-M3/52
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
MICROSEMI CORP
VISHAY SEMICONDUCTORS
Part Package Code
DO-214AA
Package Description
R-PDSO-C2
Pin Count
2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
TR, 7 INCH: 750
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
86.1 V
86.1 V
Breakdown Voltage-Min
77.9 V
77.9 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1.38 W
5 W
Rep Pk Reverse Voltage-Max
70.1 V
70.1 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
2
Breakdown Voltage-Nom
82 V
Clamping Voltage-Max
113 V
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Reverse Current-Max
1 µA
Reverse Test Voltage
70.1 V
Terminal Finish
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
30
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