SMBJP6KE75AE3 vs P6SMB75AR5 feature comparison

SMBJP6KE75AE3 Microsemi Corporation

Buy Now Datasheet

P6SMB75AR5 Taiwan Semiconductor

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PDSO-C2 ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 78.8 V 78.8 V
Breakdown Voltage-Min 71.3 V 71.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W 3 W
Rep Pk Reverse Voltage-Max 64.1 V 64.1 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Rohs Code Yes
Additional Feature EXCELLENT CLAMPING CAPABILITY
JESD-609 Code e3
Moisture Sensitivity Level 1
Reference Standard AEC-Q101
Terminal Finish MATTE TIN

Compare SMBJP6KE75AE3 with alternatives

Compare P6SMB75AR5 with alternatives