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SMBJP6KE62AE3 vs P6SMBJ43C_R1_10001 feature comparison

SMBJP6KE62AE3 Microsemi Corporation

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P6SMBJ43C_R1_10001 PanJit Semiconductor

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP PAN JIT INTERNATIONAL INC
Package Description R-PDSO-C2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 65.1 V
Breakdown Voltage-Min 58.9 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity UNIDIRECTIONAL
Power Dissipation-Max 1.38 W
Rep Pk Reverse Voltage-Max 53 V
Surface Mount YES
Technology AVALANCHE
Terminal Form C BEND
Terminal Position DUAL
Base Number Matches 7 1
Pbfree Code Yes
Rohs Code Yes
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Diodes » Transient Suppressors
Diodes » Transient Suppressors

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Compare P6SMBJ43C_R1_10001 with alternatives