SMBJP6KE56ATR
vs
P6SMB56A-E3/5B
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
MICROSEMI CORP
VISHAY SEMICONDUCTORS
Part Package Code
DO-214AA
DO-214AA
Package Description
PLASTIC, SMBJ, 2 PIN
R-PDSO-C2
Pin Count
2
2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
TR, 7 INCH: 750
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
58.8 V
58.8 V
Breakdown Voltage-Min
53.2 V
53.2 V
Breakdown Voltage-Nom
56 V
56 V
Clamping Voltage-Max
77 V
77 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e0
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1.38 W
5 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
47.8 V
47.8 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Matte Tin (Sn)
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
2
Forward Voltage-Max (VF)
3.5 V
Peak Reflow Temperature (Cel)
260
Reverse Current-Max
1 µA
Reverse Test Voltage
47.8 V
Time@Peak Reflow Temperature-Max (s)
40
Compare SMBJP6KE56ATR with alternatives
Compare P6SMB56A-E3/5B with alternatives