SMBJP6KE51AE3
vs
SMBJP6KE51AHE3-TP
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
MICROSEMI CORP
MICRO COMMERCIAL COMPONENTS CORP
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
53.6 V
53.6 V
Breakdown Voltage-Min
48.5 V
48.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1.38 W
Rep Pk Reverse Voltage-Max
43.6 V
43.6 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Rohs Code
Samacsys Manufacturer
MCC
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Clamping Voltage-Max
70.1 V
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Reference Standard
AEC-Q101; UL RECOGNIZED
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
10
Compare SMBJP6KE51AE3 with alternatives
Compare SMBJP6KE51AHE3-TP with alternatives