SMBJP6KE33AE3TR
vs
P6SMB33A-E3/5B
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
MICROSEMI CORP
|
VISHAY INTERTECHNOLOGY INC
|
Part Package Code |
DO-214AA
|
|
Package Description |
R-PDSO-C2
|
SMB, 2 PIN
|
Pin Count |
2
|
|
Reach Compliance Code |
unknown
|
not_compliant
|
ECCN Code |
EAR99
|
|
HTS Code |
8541.10.00.50
|
|
Additional Feature |
TR, 7 INCH: 750
|
EXCELLENT CLAMPING CAPABILITY
|
Breakdown Voltage-Max |
34.7 V
|
34.7 V
|
Breakdown Voltage-Min |
31.4 V
|
31.4 V
|
Breakdown Voltage-Nom |
33.05 V
|
33.05 V
|
Clamping Voltage-Max |
45.7 V
|
45.7 V
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JEDEC-95 Code |
DO-214AA
|
DO-214AA
|
JESD-30 Code |
R-PDSO-C2
|
R-PDSO-C2
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Non-rep Peak Rev Power Dis-Max |
600 W
|
600 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-65 °C
|
-65 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
Power Dissipation-Max |
1.38 W
|
5 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Rep Pk Reverse Voltage-Max |
28.2 V
|
28.2 V
|
Surface Mount |
YES
|
YES
|
Technology |
AVALANCHE
|
AVALANCHE
|
Terminal Finish |
MATTE TIN
|
Matte Tin (Sn)
|
Terminal Form |
C BEND
|
C BEND
|
Terminal Position |
DUAL
|
DUAL
|
Base Number Matches |
1
|
2
|
Factory Lead Time |
|
10 Weeks
|
Samacsys Manufacturer |
|
Vishay
|
Forward Voltage-Max (VF) |
|
3.5 V
|
Peak Reflow Temperature (Cel) |
|
260
|
Reverse Current-Max |
|
1 µA
|
Reverse Test Voltage |
|
28.2 V
|
Time@Peak Reflow Temperature-Max (s) |
|
40
|
|
|
|
Compare SMBJP6KE33AE3TR with alternatives
Compare P6SMB33A-E3/5B with alternatives