SMBJP6KE180AHE3-TP vs SMBJP6KE180AE3 feature comparison

SMBJP6KE180AHE3-TP Micro Commercial Components

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SMBJP6KE180AE3 Microsemi Corporation

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer MICRO COMMERCIAL COMPONENTS CORP MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer MCC
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 189 V 189 V
Breakdown Voltage-Min 171 V 171 V
Clamping Voltage-Max 246 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 154 V 154 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 1 1
Power Dissipation-Max 1.38 W

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Compare SMBJP6KE180AE3 with alternatives