SMBJP6KE170CAE3TR vs 1N6378 feature comparison

SMBJP6KE170CAE3TR Microsemi Corporation

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1N6378 Central Semiconductor Corp

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Rohs Code Yes No
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP CENTRAL SEMICONDUCTOR CORP
Part Package Code DO-214AA
Package Description R-PDSO-C2 O-PALF-W2
Pin Count 2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TR, 7 INCH: 750 HIGH RELIABILITY
Breakdown Voltage-Max 179 V
Breakdown Voltage-Min 162 V 21.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 600 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W 5 W
Rep Pk Reverse Voltage-Max 145 V 18 V
Surface Mount YES NO
Technology AVALANCHE AVALANCHE
Terminal Form C BEND WIRE
Terminal Position DUAL AXIAL
Base Number Matches 5 3
Pbfree Code No
Case Connection ISOLATED
Clamping Voltage-Max 25.2 V
JESD-609 Code e0
Qualification Status Not Qualified
Terminal Finish TIN LEAD

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