SMBJP6KE170CAE3
vs
1.5KE22A-B
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MICROSEMI CORP
DIODES INC
Package Description
R-PDSO-C2
O-PALF-W2
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
179 V
23.1 V
Breakdown Voltage-Min
162 V
20.9 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-201
JESD-30 Code
R-PDSO-C2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
600 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
ROUND
Package Style
SMALL OUTLINE
LONG FORM
Polarity
BIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1.38 W
5 W
Rep Pk Reverse Voltage-Max
145 V
18.8 V
Surface Mount
YES
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
WIRE
Terminal Position
DUAL
AXIAL
Base Number Matches
7
1
Pbfree Code
Rohs Code
Part Package Code
DO-201
Pin Count
2
Factory Lead Time
52 Weeks
Breakdown Voltage-Nom
22 V
Case Connection
ISOLATED
Clamping Voltage-Max
30.6 V
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Reverse Current-Max
5 µA
Terminal Finish
MATTE TIN
Compare SMBJP6KE170CAE3 with alternatives
Compare 1.5KE22A-B with alternatives