SMBJP6KE130AE3
vs
1SMB130A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
MICROSEMI CORP
CENTRAL SEMICONDUCTOR CORP
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
137 V
165.5 V
Breakdown Voltage-Min
124 V
144 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1.38 W
Rep Pk Reverse Voltage-Max
111 V
130 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
4
Pbfree Code
Rohs Code
Pin Count
2
Breakdown Voltage-Nom
154.75 V
Clamping Voltage-Max
209 V
JESD-609 Code
e0
Qualification Status
Not Qualified
Reverse Current-Max
5 µA
Reverse Test Voltage
130 V
Terminal Finish
TIN LEAD
Compare SMBJP6KE130AE3 with alternatives
Compare 1SMB130A with alternatives