SMBJ9.0A-GT3 vs P6SMB91A-E3/52 feature comparison

SMBJ9.0A-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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P6SMB91A-E3/52 Vishay Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD VISHAY SEMICONDUCTORS
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 11.5 V 95.5 V
Breakdown Voltage-Min 10 V 86.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 9 V 77.8 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 2
Pbfree Code Yes
Part Package Code DO-214AA
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom 91 V
Clamping Voltage-Max 125 V
Forward Voltage-Max (VF) 3.5 V
JESD-609 Code e3
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 5 W
Reverse Current-Max 1 µA
Reverse Test Voltage 77.8 V
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 30

Compare SMBJ9.0A-GT3 with alternatives

Compare P6SMB91A-E3/52 with alternatives