SMBJ9.0-GT3 vs SMBJ9.0A.TF feature comparison

SMBJ9.0-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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SMBJ9.0A.TF Semtech Corporation

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD SEMTECH CORP
Package Description R-PDSO-C2
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 12.6 V
Breakdown Voltage-Min 10 V 10 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 9 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Clamping Voltage-Max 15.4 V
Power Dissipation-Max 1 W
Reverse Current-Max 5 µA

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