SMBJ8.5C-E3/52 vs SM6T10C feature comparison

SMBJ8.5C-E3/52 Vishay Intertechnologies

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SM6T10C STMicroelectronics

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC STMICROELECTRONICS
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY UL RECOGNIZED
Breakdown Voltage-Max 11.5 V 10.5 V
Breakdown Voltage-Min 9.44 V 9.5 V
Breakdown Voltage-Nom 10.47 V 10 V
Clamping Voltage-Max 15.9 V 18.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 8.5 V 8.1 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 2
Pbfree Code Yes
Package Description R-PDSO-C2
Pin Count 2
Diode Capacitance-Min 1400 pF
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 4 W
Qualification Status Not Qualified
Reverse Current-Max 10 µA
Terminal Finish MATTE TIN

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