SMBJ8.0CA-HRA
vs
SMBJ7.5CHR5
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
LITTELFUSE INC
TAIWAN SEMICONDUCTOR CO LTD
Package Description
R-PDSO-J2
R-PDSO-C2
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Samacsys Manufacturer
LITTELFUSE
Additional Feature
EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
9.83 V
10.3 V
Breakdown Voltage-Min
8.89 V
8.33 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-J2
R-PDSO-C2
JESD-609 Code
e3
e3
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
5 W
3 W
Reference Standard
IEC-61000-4-2, 4-4; UL RECOGNIZED
AEC-Q101
Rep Pk Reverse Voltage-Max
8 V
7.5 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
J BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
40
30
Base Number Matches
1
4
Breakdown Voltage-Nom
9.32 V
Clamping Voltage-Max
14.3 V
Moisture Sensitivity Level
1
Compare SMBJ8.0CA-HRA with alternatives
Compare SMBJ7.5CHR5 with alternatives