SMBJ8.0C-T
vs
P6SMB9.1CAHR4G
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MICRO COMMERCIAL COMPONENTS
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Breakdown Voltage-Max |
10.9 V
|
9.55 V
|
| Breakdown Voltage-Min |
8.89 V
|
8.65 V
|
| Breakdown Voltage-Nom |
9.9 V
|
9.1 V
|
| Clamping Voltage-Max |
15 V
|
13.4 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-609 Code |
e0
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Non-rep Peak Rev Power Dis-Max |
600 W
|
600 W
|
| Number of Elements |
1
|
1
|
| Peak Reflow Temperature (Cel) |
240
|
|
| Polarity |
UNIDIRECTIONAL
|
BIDIRECTIONAL
|
| Rep Pk Reverse Voltage-Max |
8 V
|
7.78 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
TIN LEAD
|
MATTE TIN
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Base Number Matches |
2
|
1
|
| Package Description |
|
SMB, 2 PIN
|
| Additional Feature |
|
EXCELLENT CLAMPING CAPABILITY
|
| Diode Element Material |
|
SILICON
|
| JEDEC-95 Code |
|
DO-214AA
|
| JESD-30 Code |
|
R-PDSO-C2
|
| Number of Terminals |
|
2
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Power Dissipation-Max |
|
3 W
|
| Reference Standard |
|
AEC-Q101
|
| Terminal Form |
|
C BEND
|
| Terminal Position |
|
DUAL
|
|
|
|
Compare SMBJ8.0C-T with alternatives
Compare P6SMB9.1CAHR4G with alternatives