SMBJ8.0C
vs
SMBJ7.5C
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Contact Manufacturer
Ihs Manufacturer
HY ELECTRONIC CORP
GOODWORK SEMICONDUCTOR CO LTD
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Category CO2 Kg
8.54
Compliance Temperature Grade
Military: -55C to +150C
Additional Feature
PRSM-MIN
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max
11.3 V
10.67 V
Breakdown Voltage-Min
8.89 V
8.33 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
5 W
Rep Pk Reverse Voltage-Max
8 V
7.5 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
2
4
Breakdown Voltage-Nom
9.5 V
Clamping Voltage-Max
14.3 V
JEDEC-95 Code
DO-214AA
Compare SMBJ8.0C with alternatives
Compare SMBJ7.5C with alternatives