SMBJ8.0A
vs
SMBJ8.5R5
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Obsolete
Ihs Manufacturer
HY ELECTRONIC CORP
TAIWAN SEMICONDUCTOR CO LTD
Package Description
SMB, 2 PIN
SMB, 2 PIN
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Samacsys Manufacturer
HY Electronic
Additional Feature
PRSM-MIN
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
10.2 V
11.5 V
Breakdown Voltage-Min
8.89 V
9.44 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
3 W
Rep Pk Reverse Voltage-Max
8 V
8.5 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
60
1
Rohs Code
Breakdown Voltage-Nom
10.47 V
Clamping Voltage-Max
15.9 V
JEDEC-95 Code
DO-214AA
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
30
Compare SMBJ8.0A with alternatives
Compare SMBJ8.5R5 with alternatives