SMBJ8.0
vs
SMBJ8.0A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
GENERAL INSTRUMENT CORP
SEMTECH CORP
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Max
11.3 V
Breakdown Voltage-Min
8.89 V
8.89 V
Clamping Voltage-Max
15 V
13.6 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Not Qualified
Reverse Current-Max
50 µA
50 µA
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
4
3
Rohs Code
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Nom
9.36 V
JESD-609 Code
e0
Power Dissipation-Max
1 W
Rep Pk Reverse Voltage-Max
8 V
Terminal Finish
TIN LEAD
Compare SMBJ8.0 with alternatives
Compare SMBJ8.0A with alternatives