SMBJ75CE3TR vs SMBJ75C-E3/5B feature comparison

SMBJ75CE3TR Microsemi Corporation

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SMBJ75C-E3/5B Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP VISHAY INTERTECHNOLOGY INC
Part Package Code DO-214AA
Package Description R-PDSO-C2
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TR, 7 INCH; 750 EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 102 V 102 V
Breakdown Voltage-Min 83.3 V 83.3 V
Breakdown Voltage-Nom 92.65 V 92.65 V
Clamping Voltage-Max 134 V 134 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1.38 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 75 V 75 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 1 2
Reference Standard UL RECOGNIZED

Compare SMBJ75CE3TR with alternatives

Compare SMBJ75C-E3/5B with alternatives