SMBJ75A-E3/52
vs
MXSMBJ75AE3
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
Rohs Code
Yes
Yes
Part Life Cycle Code
Active
Active
Ihs Manufacturer
VISHAY SEMICONDUCTORS
MICROCHIP TECHNOLOGY INC
Part Package Code
DO-214AA
Package Description
R-PDSO-C2
SMBJ, 2 PIN
Pin Count
2
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
Breakdown Voltage-Max
92.1 V
92.1 V
Breakdown Voltage-Min
83.3 V
83.3 V
Breakdown Voltage-Nom
87.7 V
Clamping Voltage-Max
121 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
3.5 V
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
1.38 W
Qualification Status
Not Qualified
Reference Standard
UL RECOGNIZED
IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max
75 V
75 V
Reverse Current-Max
1 µA
Reverse Test Voltage
75 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Matte Tin (Sn)
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
10
Base Number Matches
2
2
Compare SMBJ75A-E3/52 with alternatives
Compare MXSMBJ75AE3 with alternatives