SMBJ70CHR4
vs
SMBJ70C
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description
R-PDSO-C2
R-PDSO-J2
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max
95.1 V
95.1 V
Breakdown Voltage-Min
77.8 V
77.8 V
Breakdown Voltage-Nom
86.45 V
86.45 V
Clamping Voltage-Max
125 V
125 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-J2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
3 W
Reference Standard
AEC-Q101
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
70 V
70 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
Terminal Form
C BEND
J BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Base Number Matches
4
4
Part Package Code
SMB
Compare SMBJ70CHR4 with alternatives
Compare SMBJ70C with alternatives