SMBJ70C
vs
SMBJ70C
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Active
Ihs Manufacturer
GOODWORK SEMICONDUCTOR CO LTD
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description
R-PDSO-C2
R-PDSO-J2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max
98.6 V
95.1 V
Breakdown Voltage-Min
77.8 V
77.8 V
Breakdown Voltage-Nom
88.2 V
86.45 V
Clamping Voltage-Max
125 V
125 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-J2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Rep Pk Reverse Voltage-Max
70 V
70 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
J BEND
Terminal Position
DUAL
DUAL
Base Number Matches
4
4
Rohs Code
Part Package Code
SMB
Peak Reflow Temperature (Cel)
260
Reference Standard
UL RECOGNIZED
Compare SMBJ70C with alternatives
Compare SMBJ70C with alternatives