SMBJ7.5-GT3 vs SMBJ7.5 feature comparison

SMBJ7.5-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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SMBJ7.5 FCI Semiconductor

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Rohs Code Yes
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD FIRST COMPONENTS INTERNATIONAL
Package Description R-PDSO-C2
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 10.67 V
Breakdown Voltage-Min 8.33 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 7.5 V 7.5 V
Surface Mount YES YES
Technology AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 46
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 9.27 V
Clamping Voltage-Max 14.3 V

Compare SMBJ7.5-GT3 with alternatives

Compare SMBJ7.5 with alternatives