SMBJ64CATR vs SMBJ64C-T feature comparison

SMBJ64CATR Sangdest Microelectronics (Nanjing) Co Ltd

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SMBJ64C-T Rectron Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD RECTRON LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Date Of Intro 2018-08-03
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 78.6 V 86.9 V
Breakdown Voltage-Min 71.1 V 71.1 V
Breakdown Voltage-Nom 74.85 V 79 V
Clamping Voltage-Max 103 V 114 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity BIDIRECTIONAL BIDIRECTIONAL
Reference Standard MIL-STD-750 UL CERTIFIED
Rep Pk Reverse Voltage-Max 64 V 64 V
Reverse Current-Max 5 µA 1 µA
Reverse Test Voltage 64 V 64 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 2 2
Package Description SMB, 2 PIN
JESD-609 Code e3
Power Dissipation-Max 5 W
Terminal Finish MATTE TIN

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