SMBJ60C vs SMBJ60CM4G feature comparison

SMBJ60C MERITEK Electronics Corporation

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SMBJ60CM4G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MERITEK ELECTRONICS CORP TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 81.5 V 81.5 V
Breakdown Voltage-Min 66.7 V 66.7 V
Breakdown Voltage-Nom 74.1 V 74.1 V
Clamping Voltage-Max 107 V 107 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W 3 W
Reference Standard MIL-STD-750
Rep Pk Reverse Voltage-Max 60 V 60 V
Reverse Current-Max 1 µA
Reverse Test Voltage 60 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 4 2
Package Description SMB, 2 PIN
JESD-609 Code e3
Terminal Finish MATTE TIN

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