SMBJ60C
vs
SMBJ60CE3TR
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INTERNATIONAL SEMICONDUCTOR INC
MICROSEMI CORP
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Nom
74.1 V
74.1 V
Clamping Voltage-Max
107 V
107 V
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Rep Pk Reverse Voltage-Max
60 V
60 V
Surface Mount
YES
YES
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
4
22
Rohs Code
Part Package Code
DO-214AA
Package Description
R-PDSO-C2
Pin Count
2
Additional Feature
TR, 7 INCH; 750
Breakdown Voltage-Max
81.5 V
Breakdown Voltage-Min
66.7 V
Configuration
SINGLE
Diode Element Material
SILICON
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
600 W
Number of Elements
1
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max
1.38 W
Qualification Status
Not Qualified
Technology
AVALANCHE
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
10
Compare SMBJ60C with alternatives
Compare SMBJ60CE3TR with alternatives