SMBJ60C vs SMBJ60CE3TR feature comparison

SMBJ60C General Instrument Corp

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SMBJ60CE3TR Microsemi Corporation

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer GENERAL INSTRUMENT CORP MICROSEMI CORP
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 84.5 V 81.5 V
Breakdown Voltage-Min 66.7 V 66.7 V
Clamping Voltage-Max 107 V 107 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 4 22
Rohs Code Yes
Part Package Code DO-214AA
Package Description R-PDSO-C2
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature TR, 7 INCH; 750
Breakdown Voltage-Nom 74.1 V
JEDEC-95 Code DO-214AA
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 1.38 W
Rep Pk Reverse Voltage-Max 60 V
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 10

Compare SMBJ60C with alternatives

Compare SMBJ60CE3TR with alternatives