SMBJ60C
vs
SMBJ60C-G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
GALAXY SEMI-CONDUCTOR CO LTD
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description
R-PDSO-J2
R-PDSO-C2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max
81.5 V
84.5 V
Breakdown Voltage-Min
66.7 V
66.7 V
Breakdown Voltage-Nom
74.1 V
Clamping Voltage-Max
107 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-J2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Reference Standard
UL RECOGNIZED
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
60 V
60 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
J BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
4
4
Qualification Status
Not Qualified
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare SMBJ60C with alternatives
Compare SMBJ60C-G with alternatives