SMBJ60C vs P6SMBJ60CAT/R13 feature comparison

SMBJ60C EIC Semiconductor Inc

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P6SMBJ60CAT/R13 PanJit Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer EIC SEMICONDUCTOR CO LTD PAN JIT INTERNATIONAL INC
Package Description R-PDSO-C2
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 81.5 V 76.7 V
Breakdown Voltage-Min 66.7 V 66.7 V
Breakdown Voltage-Nom 75.6 V 71.7 V
Clamping Voltage-Max 107 V 96.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Rep Pk Reverse Voltage-Max 60 V 60 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN
Terminal Form C BEND
Terminal Position DUAL
Base Number Matches 4 2

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