SMBJ60
vs
SMBJ60A.TF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
parentfamilyid
1563080
Ihs Manufacturer
EIC SEMICONDUCTOR CO LTD
SEMTECH CORP
Package Description
R-PDSO-C2
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Total Weight
108
Category CO2 Kg
8.54
8.54
CO2
922.3199999999999
Compliance Temperature Grade
Military: -55C to +150C
Military: -55C to +150C
EU RoHS Version
RoHS 2 (2015/863/EU)
EU RoHS Exemptions
7(a)
Candidate List Date
2024-01-23
SVHC Over MCV
7439-92-1
CAS Accounted for Wt
100
CA Prop 65 Presence
YES
CA Prop 65 CAS Numbers
1333-86-4, 1309-64-4, 7439-92-1
Conflict Mineral Status
DRC Conflict Free
Conflict Mineral Status Source
CMRT V6.30
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max
81.5 V
Breakdown Voltage-Min
66.7 V
66.7 V
Breakdown Voltage-Nom
75.6 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
60 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
46
1
Clamping Voltage-Max
96.8 V
Power Dissipation-Max
1 W
Qualification Status
Not Qualified
Reverse Current-Max
5 µA
Compare SMBJ60 with alternatives
Compare SMBJ60A.TF with alternatives