SMBJ6.5A vs SMBJ6.5HR4G feature comparison

SMBJ6.5A FCI Semiconductor

Buy Now Datasheet

SMBJ6.5HR4G Taiwan Semiconductor

Buy Now Datasheet
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer FIRST COMPONENTS INTERNATIONAL TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 7.6 V 8.02 V
Clamping Voltage-Max 11.2 V 12.3 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 6.5 V 6.5 V
Surface Mount YES YES
Base Number Matches 1 1
Rohs Code Yes
Package Description R-PDSO-C2
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 8.82 V
Breakdown Voltage-Min 7.22 V
Configuration SINGLE
Diode Element Material SILICON
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 3 W
Reference Standard AEC-Q101
Technology AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30

Compare SMBJ6.5A with alternatives

Compare SMBJ6.5HR4G with alternatives